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Abstract The design and development of solar‐blind photodetectors utilizing ultrawide bandgap semiconductors have garnered significant attention due to their extensive utility in specialty commercial sectors. Solar‐blind photodetectors that display excellent photosensitivity, fast response time and are produced using cost‐effective fabrication steps will fulfill the performance demands in relevant applications. Herein, highly textured Sn‐doped Ga₂O₃thin film metal‐semiconductor‐metal type deep‐UV photodetectors using a commercially scalable magnetron sputtering method are reported. Commercially achievable growth and fabrication steps are intentionally chosen to demonstrate an economically viable photodetection workflow without compromising the device's performance. In‐depth structural, morphological, chemical, and optical characterization are reported to optimize the configuration for further device fabrication and testing. Under transient triggering circumstances, a fast response time of ≈500 ms is reported, accompanied by a responsivity of ≈60.5 A W⁻¹. The detectivity, external quantum efficiency, and photo‐to‐dark current ratio values are reported as 1.6 × 10¹³Jones, 2.8 × 10⁴%, and 17.4, respectively. The overall device performance and cost‐effective fabrication process for solar‐blind UV photodetection using Sn‐doped Ga₂O₃is promising. The approach holds promise for significant implications toward the development of electronics capable of functioning in extreme environments and exhibits substantial potential for enhancing low‐cost UV photodetector technology. 

Abstract Ultra-thin films of low damping ferromagnetic insulators with perpendicular magnetic anisotropy have been identified as critical to advancing spin-based electronics by significantly reducing the threshold for current-induced magnetization switching while enabling new types of hybrid structures or devices. Here, we have developed a new class of ultra-thin spinel structure Li_0.5Al_1.0Fe_1.5O₄(LAFO) films on MgGa₂O₄(MGO) substrates with: 1) perpendicular magnetic anisotropy; 2) low magnetic damping and 3) the absence of degraded or magnetic dead layers. These films have been integrated with epitaxial Pt spin source layers to demonstrate record low magnetization switching currents and high spin-orbit torque efficiencies. These LAFO films on MGO thus combine all of the desirable properties of ferromagnetic insulators with perpendicular magnetic anisotropy, opening new possibilities for spin based electronics. 

Memristor devices fabricated using the chalcogenide Ge 2 Te 3 phase change thin films in a metal-insulator-metal structure are characterized using thermal and electrical stimuli in this study. Once the thermal and electrical stimuli are applied, cross-sectional transmission electron microscopy (TEM) and X-ray energy-dispersive spectroscopy (XEDS) analyses are performed to determine structural and compositional changes in the devices. Electrical measurements on these devices showed a need for increasing compliance current between cycles to initiate switching from low resistance state (LRS) to high resistance state (HRS). The measured resistance in HRS also exhibited a steady decrease with increase in the compliance current. High resolution TEM studies on devices in HRS showed the presence of residual crystalline phase at the top-electrode/dielectric interface, which may explain the observed dependence on compliance current. XEDS study revealed diffusion related processes at dielectric-electrode interface characterized, by the separation of Ge 2 Te 3 into Ge- and Te- enriched interfacial layers. This was also accompanied by spikes in O level at these regions. Furthermore, in-situ heating experiments on as-grown thin films revealed a deleterious effect of Ti adhesive layer, wherein the in-diffusion of Ti leads to further degradation of the dielectric layer. This experimental physics-based study shows that the large HRS/LRS ratio below the current compliance limit of 1 mA and the ability to control the HRS and LRS by varying the compliance current are attractive for memristor and neuromorphic computing applications.